Design Of P-channel VDMOS With Breakdown Voltage Of 500V

VDMOS is a new generation of power semiconductor devices that born in the integration of power electronics technology and microelectronic technology It not only has the advantages of the traditional MOS, such as, switching speed fast, small drive power, negative temperature coefficient, etc. but also has high breakdown voltage, low on-resistance and high reliability performance. Because of these merits, VDMOS has been widely used in switching power supplies, motor control, radio communications, audio amplifiers, high- frequency oscillator, uninterruptible power supply, energy-saving lamps, active power factor correction, inverters and other fields. But P-channel VDMOS device has the advantage that can not be replaced by N-channel VDMOS in the aviation, aerospace and new energy applications, such as, the ability of anti- radiation. What’s more,combining use P-channel and N-channel VDMOS devices can simplify circuit while optimizing circuit performance. At present, most of the power P-channel VDMOS dependent on imports. Thus, the research of the P-channel power VDMOS solely based on the level of domestic process line is an urgent matter, and has great practical significance.This thesis on the basis of a project which cooperate with a well-known domestic units, designing P-channel VDMOS with breakdown voltage of 500 V. Main parameters: breakdown voltage is-500 V, the threshold voltage is-3 ~-5V, on-resistance is less than 4.9Ω. Developing the process of high breakdown voltage P-channel VDMOS rely on the partner’s process line, and at the same time designing the cell and terminal of the device, analysis of the result of taped out at last.The main contents of this paper are as follows:1. Establishing the product manufacture process and determining the basic parameters indicators refer to the foreign corresponding product manual and the 0.5 micron six- inch process line of project partner; conducting co-simulation process and devices, including Static and dynamic parameters by two-dimensional simulator Tsuprem4 & Medici; after the simulation and optimization of the device to determine the structural and process parameters. Simulation results: breakdown voltage is-527 V, threshold voltage is-3.6V, specific on-resistance is 0.192Ω·cm2, turn on time is 140 ns, turn off time is 85 ns, input capacitance is 567 nF, output capacitor is 58 nF, re verse transfer capacitance is 11 nF,body diode reverse recovery time is 150ns; simulation results meet the design parameters indicator devices.2. Drawing layout of the product combine with the ability to process line of machines(such as etching method, p recision of lithography, etc);conduct taping out in different taping material and Nbody implantation dose; then,conduct test and analysis after the completion of taping out; the test results compared with the design goal parameters.3. Finally, finishing the sμmmarizes of the taped out results to further improve the characteristics of the chip and complete the chip a qualitative leap from the sample to products.