A 1200 V Igbt High Reliability Design

As a new power device-insulated gate bipolar transistor (IGBT) is widely used in home appliances and industrial control field. However, the global market of IGBT is monopolized by foreign companies (Infineon, farchild, IR, Fuji). The domestic IGBT is in the backward technology, especially the poor reliability of the state. How to enhance the reliability of the IGBT and manufacture IGBT products with independent intellectual property rights, and make it to the market is an urgent task.This paper is based on a cooperation project with a well-known domestic semiconductor foundryt. The main subject of this thesis is to design a1200V IGBT, which has high reliability, hoping to help promote IGBT localization.1. The design1200V IGBT, including process design, device structure design (cell and termination), layout design and reliability design. Because process design, device structure design, layout design and reliability design are interrelated, they should be considered carefully. So, established the process of cell and termination at first, and then design the process and device structure combined with simulation tools, and then re-design process considering the reliability of the device. Followed by optimize of the device design and simulate. At last, we get the process and device structure parameters, and draw the layout. When design, the design parameters need to analyze include the size of the cellular and the injected dose of the termination etc.2. The1200V IGBT totally tapes out twice, and the final testing parameters are as follows:BV is about1400V, VTH is about5V, and Vce is about1.94V. Switching time: td(on):56ns/trise:157ns/td(off):385ns/tfall:101ns. All meet the parameter requirements. At the same time, the devices pass the HTRB test, and the short circuit time is12μs, greater than the general product datasheet nominal value10μs.3. Proposed several new structures for enhancing the reliability of the IGBT devices.