The Simulation Research Of Temperature Rise In The High-Voltage IGBT Chip During Short-Circuit Turn-Off

In recent years, with the vigorous development of power electronic technology, renewable energy sources such as wind power and solar energy utilization efficiency was continuing to improve, and the application scale expands unceasingly.The rising demand for renewable energy grid, distributed generation and grid-connected, asynchronous AC grid interconnection and other areas,was making the advantage of multiple termination voltage source converter HVDC (MTVSC-HVDC) more prominent. But the biggest question of multiple termination HVDC was:when fault occured, you need to very quickly cut off the short-circuit current on the DC side and dissipate the energy stored in the transmission system. ABB launched hybrid DC circuit breaker may well accomplish this task, but the utilization of the IGBT chip is not enough; This paper simulated the Hybrid DC circuit breaker with PSCAD, When analyzed the work of the hybrid DC breaker electrical stress on each part, we proposed an new drive to increase turn-off current, and tested on a single chip. However, due to the performance of the chip itself, the off current could not increase indefinitely. Based on the IGBT chip turn-off failure analysis, the author found that the IGBT turn-off failure was closely related to the chip temperature. Overall power consumption is too large to exceed the tolerance limit of IGBT chip appears secondary breakdown, or local high temperature makes it burn Breakdown.Therefore, the effective approach to improve the IGBT chip turn-off capability was to control the IGBT chip temperature before turn-off and turn-off losses.Through the testing of overcurrent turn-off of an IGBT chip with different gate-off voltages, the author found that the gate-off voltage increase will help improve the IGBT chip turn-off speed and reduce turn-off losses. It indicated higher gate-off voltage was conducive to enhancing the ability of the DC circuit breaker turn-off.In addition, the author simulated the chip temperature rise of NPT type and SPT type with different packaging technique, and obtained the best design of chip and package on high voltage IGBT with overcurrent turn-off capacity.