| The high reliable IGBTs(Insulated Gate Bipolar Transistor) have been widely used in the industry application. The termination structure, as an indispensible part of the device, is a very hard task for every IGBT designer. In domestic, due to the lack of the related experience and the week foundation in the industry, we are now trying to design and fabricate high reliable IGBTs. Achieving mass production of high reliable IGBT is still far away from us. As a result, the domestic market has been monopolized by foreign companies, such as Infineon, ABB, Mitsubishi and so on, for a very long time.In order to make the localization of the product come true, we are developing a high reliable commercial 1700 Non-Punch-Through IGBT in the cooperation with a well-known domestic foundry. This article presents a mountain of work in the analysis and design of the termination structure with high reliability.Firstly, the breakdown theory of power devices is studied and analyzed in details. Besides, the choice of the termination structure is made according to the requirement of high reliability. Then, the initial design and fabrication are conducted.Secondly, TCAD simulation is adopted to investigate the device characteristics, presented by the test of the samples in first run. It’s found that the wrong breakdown point induces the soft breakdown feature. It is the result of the surface breakdown that the I-V curve walks out during breakdown test. The redistribution of mobile ions is the reason for the failure in the high temperature and reverse bias test.Last, the optimization of the termination structure and fabrication of the second run are conducted to solve the above problems. The final test verifies the simulation result. The device, capable of blocking 2075 V, shows a very straight I-V curve during breakdown test without any soft feature or walk-out tendency. Besides, the high temperature and reverse bias test and the dynamic switching test are overcome by the optimized device. |
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