The Preparation Of Vanadium Oxide Thin Films And Their Thermal Discoloration Characteristic Research

Vanadium dioxide can undergo a reversible semiconductor to metal phase transition at68℃, with the phase transition, the optical, electrical, magnetic properties of the thin films have a drastic change, the special character of the thin films make it can be used widely in the real life. In this paper, vanadium oxide thin films were prepared by the method of magnetron sputtering, we study the optical properties (infrared transmittance, refractive index, extinction coefficient, et al) and electrical properties (square resistance, et al) of the thin films, the morphology and microstructure of the thin films were characterized using X-ray diffraction, scanning electron and other analysis method of thin films.In the experiment, by optimizing the conditions we used, we get the thin films which have good structure and properties. In this paper, we study the following content:(1)We changed the sputtering time (15min,20min,25min,30min), and found for different sputtering times, the change of infrared transmittance in the high temperature and low temperature can be reached as high as58%, the contrast factor of the thin films can be reached as high as99%, the phase transition temperature is reduced from66to55℃, and we calculated the refractive index and extinction coefficient of the thin film, and we got the thickness of the thin films. We found the square resistance of the thin films decreased with the increasing of sputtering time. The XRD patterns and SEM patterns show that sputtering time has a great influence in the crystalline, particle size, particle definition of the thin films.(2) The thin films were prepared by using different oxygen flows (3sccm,3.2sccm,3.6sccm), with the different oxygen flows, the change of infrared transmittance in the high temperature and low temperature can be reached as high as57%, the contrast factor of the thin film can be reached as high as88%, the phase transition temperature is decreased to about54℃, According to the X-ray diffraction results of the thin films, we found the thin films have the preferred orientation growth along the VO2(011), we observed that with the increase of oxygen flow, VO2(200) diffraction peak decreases obviously. We found there is no other strong XRD peak corresponding to other crystalline vanadium oxides.Through the study and experiment, we have a good understanding of the preparation conditions of vanadium oxide thin films, the thin films were prepared with different process parameters, and we studied the influence of different process parameters on the film structure and performance, and analysis the main reason for the change of structure and properties of the thin films, which had a good foundation for the application of the thin films.