Study On Preparation Of Vanadium Oxide Thin Films On Different Substrates By The Method Of Metal-oxygenation

In this paper,vanadium metallic thin films were prepared on silicon nitride substrate,glass substrate,conductive glass substrate and porous silicon substrate with facing targets DC sputtering technique,then the vanadium metallic thin films were annealed.The vanadium oxide thin film made by this way have high TCR values,our team have never experimented in this way by which vanadium oxide thin films were prepared. The major target of this paper is to study the electrical character of the vanadium oxide thin films prepared on different substracts,and especially the relation between TCR and parameters.The effects of the parameters including sputtering pressure, sputtering time, annealing time and annealing temperature on the performance of vanadium oxide thin films are analyzed by choosing different level of these parameters in the orthogonal experiment. The optimal deposition parameters of vanadium oxide thin films were concluded as follow: on silicon nitride substrate, sputtering pressure: 1Pa, sputtering time:20min, annealing temperature: 400℃, annealing time: 1.5h; on conductive glass substrate, sputtering pressure:1.5Pa, sputtering time:20min, annealing temperature:300℃,annealing time:2h; on glass substrate: sputtering pressure:1Pa, sputtering time:10min,annealing temperature:400℃,annealing time:2h.But the result of experiment on the porous silicon substrate proved that if the porous silicon is annealed in a high temperature,it will be damaged badly.By using scan electron microscope(SEM),X-ray diffraction analysis(XRD) and X-ray photoelectron spectroscopy(XPS) analysis,the microappearance and component of the vanadium oxide thin films.According as the result of the experiment, this paper compared the method of metal- oxygenation with reactive sputtering technique,and told the differents between these two method in order to develop the ways of preparing vanadium oxide thin films.