Ga <sub> 2 </ Sub> O <sub> 3 </ Sub> Thin Films And Features,

Ga₂O₃ has many kinds of structures including hexagonal crystal structure(β-Ga₂O₃) and monoclinic crystal structure(α-Ga₂O₃).The β-Ga₂O₃ is a wide band gap semiconductor.Much considerable effort has been directed towards β-Ga₂O₃.At room temperature,the optical band gap of β-Ga₂O₃ is between 4.2 and 4.9eV,and it has good chemical and thermal stability.Therefore β-Ga₂O₃ can be widely applied to high temperature oxygen sensors,magnetic memory and dielectric layer,antireflectire coatings for GaAs,the passivation of GaAs surfaces,deep ultraviolet trasmission oxides,and also may emerge as an alternate choice to sulfide-based phosphors.There are many methods to prepare β-Ga₂O₃ films,including spray pyrolysis,sputtering,MOCVD,pulsed-laser deposition method(PLD) and electronic beam evaporation.In the paper, β-Ga₂O₃ power of 99.999% purity was used as the source material for ceramics target. We used radio frequency magnetron sputtering at low temperature(40) to deposite β-Ga₂O₃ films on Si(111) and quartz underlays directly.X-ray diffraction(XRD),scanning electron macroscope(SEM),atomic force microscope(AFM),Fourier transform infrared spectra(FTIR),X-ray photoeletron spectrum(XPS) and ultraviolet-visible spectrophotometers are used to study the structral characteristics,surface topography and optical properties in different annealing temperature and annealing time.Since the Ga₂O₃ thin films deposited directly on Si(111) and quartz underlays by radio frequency magnetron sputtering at low temperature(40) were amophous,the amorphous β-Ga₂O₃ films were needed to be annealed.The annealing temperatureswere 800℃,950℃,1000℃,1050℃ and 1100℃, the annealing time was 20 min.From 950℃ at 29=30.080°, 31.700°, 64.560°,feature peaks appeared.These feature peaks are (004), (200), (12-2) direction.This indicated that the films were multi-crystal films.Since the diffraction peaks of Ga₂O₃ films annealed at 1050℃ were the...