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Ga <sub> 2 </ Sub> O <sub> 3 </ Sub> Thin Films And Features,

Posted on:2007-11-03Degree:MasterType:Thesis
Country:ChinaCandidate:G YangFull Text:PDF
GTID:2208360185982648Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Ga2O3 has many kinds of structures including hexagonal crystal structure(β-Ga2O3) and monoclinic crystal structure(α-Ga2O3).The β-Ga2O3 is a wide band gap semiconductor.Much considerable effort has been directed towards β-Ga2O3.At room temperature,the optical band gap of β-Ga2O3 is between 4.2 and 4.9eV,and it has good chemical and thermal stability.Therefore β-Ga2O3 can be widely applied to high temperature oxygen sensors,magnetic memory and dielectric layer,antireflectire coatings for GaAs,the passivation of GaAs surfaces,deep ultraviolet trasmission oxides,and also may emerge as an alternate choice to sulfide-based phosphors.There are many methods to prepare β-Ga2O3 films,including spray pyrolysis,sputtering,MOCVD,pulsed-laser deposition method(PLD) and electronic beam evaporation.In the paper, β-Ga2O3 power of 99.999% purity was used as the source material for ceramics target. We used radio frequency magnetron sputtering at low temperature(40) to deposite β-Ga2O3 films on Si(111) and quartz underlays directly.X-ray diffraction(XRD),scanning electron macroscope(SEM),atomic force microscope(AFM),Fourier transform infrared spectra(FTIR),X-ray photoeletron spectrum(XPS) and ultraviolet-visible spectrophotometers are used to study the structral characteristics,surface topography and optical properties in different annealing temperature and annealing time.Since the Ga2O3 thin films deposited directly on Si(111) and quartz underlays by radio frequency magnetron sputtering at low temperature(40) were amophous,the amorphous β-Ga2O3 films were needed to be annealed.The annealing temperatureswere 800℃,950℃,1000℃,1050℃ and 1100℃, the annealing time was 20 min.From 950℃ at 29=30.080°, 31.700°, 64.560°,feature peaks appeared.These feature peaks are (004), (200), (12-2) direction.This indicated that the films were multi-crystal films.Since the diffraction peaks of Ga2O3 films annealed at 1050℃ were the...
Keywords/Search Tags:Gallium Oxide thin films, radio frequency magnetron sputtering, structure properties, optical properties, wide band gap semiconductors
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