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Preparation And Characterization Of Copper-Tin-Oixde Thin Films Synthesized By Magnetron Sputtering

Posted on:2010-05-28Degree:MasterType:Thesis
Country:ChinaCandidate:T NingFull Text:PDF
GTID:2178360278473375Subject:Microelectronics and Solid State Electronics
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Transparent conducting oxides(TCOs) have attracted many attentions for their large electronic bandgap(usually≥3.lev).We can gain optically transparent thin film by using them,or fabricate blue even ultraviolet diodes,etc.Most of the known transparent conducting oxides(TCOs) and their doped version such as In2O3:Sn(ITO),SnO2:F/Sb,ZnO:Al/F etc,are all n-type materials.As a result of oxygen vacancy and the strong localization of the holes at oxygen 2p level,it is hard to obtain p-type conducting thin films only by doping acceptors into metallic oxides.Kawazoe reported p-type CuAlO2 conducting thin film in 1997,from then on,a selects of p-type conducting thin films were reported with delafossite structure,such as CuGaO2,CuInO2,CuYO2,CuScO2,etc.SnO2 with a direct bandgap(3.6ev-4.3ev) is a potential material.Unlike most metal oxide,although SnO2 is very stable chemically.It could be a candidate for high temperature electronic device,and transparent electronic devices if p-type SnO2 can be realized.Till now few reports about p-type SnO2 have been found.Under such background,the preparation and characterization are investigated in this dissertation.In this dissertation,p-type CuSnO3 thin films were prepared on quartz substrate by RF magnetron sputtering.The samples were annealed at different temperatures in air.The Structural and optoelectronic properties of the samples were studied by XRD,SEM,XPS,EDS,etc.The structural properties are examined by X-ray Diffraction.XRD pattern shows the as-deposited thin film on quartz substrate is amorphous,There is a structure transition when the annealing temperature is above 530℃.SEM reveals there are many grains on the surface of the films.These grains have perovskite structure,with a(1 0 3) orientation.The full wave at half maximum(FWHM) becomes narrower,as annealing temperature increases,indicating that the grain size is becoming larger.The gas pressure of Ar also influences fwhm of the diffraction peak,the fwhm of copper-tin-oxide thin film becomes narrower,as gas pressure increases.The optical transmittance properties are measured by a Shimadzu TV-1900 double-beam UV-vis-NIR spectrophotometer.Influences of Gas pressure and annealing process to the optical transmittance have been reseached.The optical transmittance increases,as the gas pressure of Ar increaes,when the gas pressure raises to 1.2Pa,the optical transmittance is above 70%.The optical transmittance drops after annealing process. The sample annealed at 630℃has the lowest optical transmittance.The bandgap of unannealed thin film is about 2.69eV,while the annealed thin film is about 1.5eV.Van der pauw method reveals gas pressure influence resisitivity of CuSnO3 film,The resistivity becomes higher,as the gas pressure increases.Film resistivity decreases when the annealing temperature is near 630℃.The CuSnO3 film deposited at 0.5Pa gas pressure,which annealed at 630℃,has p-type conductivity,and a resistivity of about 66.3434Ωcm,the carrier concentration is about 6.42×1016cm-3,and hall mobility is about 1.467cm2/Vs.P-type CuSnO3 thin films with perovskite structure have been fabricated by RF magnetron sputtering.The Ar gas pressure and annealing temperature are very critical to the structural and optoelectronic properties of the samples.
Keywords/Search Tags:magnetron sputtering, copper-tin-oxide thin film, perovskite structure, electrical and optical properties
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