Numerical Simulation Based On Finite Volume Method Of Semiconductor Device

At the beginning of the mid of20th century, the electronics industry has got great progress. Now it has become the largest industry in the world. All these were based on semiconductor devices. In order to adapt to the huge demand of the electronics industry, semiconductor devices has also made rapid development. It has important application value to analyze and design the semiconductor devices.People were used to analyzing semiconductor devices with analytical technique since Shockley had laid the theoretical basis of semiconductor devices. The analytical technique is using the mathematical expressions which are given under certain conditions to describe the physical and electrical properties of the device through some analysis and assumptions. The analytical technique is easy to be used and it has been proven to be effective by a large number of experiments. But because of the difficulties of analytical solution, it is usually used to process one dimensional problem only, and need to do a lot of assumptions. So its accuracies are not high enough, and sometimes it is even difficult to reflect the relevant physical effects. With the development of large scale integration (VLSI) devices become increasingly sophisticated and complex, the effects of two dimensional and three dimensional effects become more and more clear. Therefore the requirement of simulation of semiconductor devices becomes highly. This one dimensional analysis is unable to meet the needs; we need to study the two dimensional and three dimensional effects. And the numerical simulation technique appears in such demands.The numerical simulation technique of semiconductor device is from the basic equations which are used to describe the semiconductor devices, according to the geometry of the device to establish a strict mathematical model, then solute them and get some device parameters. Based on the above analysis, we can clearly recognize the numerical simulation technique is more accurate than analytical technique. Of course, the solution process should be more complicated. Generally use numerical simulation technology to process the problem of small size device in order to meet the basic needs of the analysis and design of devices. This thesis’s theoretical foundation is finite volume method. And simulate semiconductor device with numerical technique. The main contents are below:1. Analyze of some characteristics of semiconductor device firstly. Then we have some degree of understanding of semiconductor devices.2. Derivate the physical models and numerical methods for semiconductor devices in detail. And give the physical model equations, the equation of the discrete mesh, the solution method.3. Use C or C++to achieve a two-dimensional semiconductor device numerical simulation program. At last simulate n-p-n transistor as an example.