Research On The Basic Model Of Silicon Semiconductor Devices

In the beginning, people always use the analytical method to carry out the characteristic of semiconductor devices. This method can analyze characteristic of some devices in some time. While the structure of device is complicated, the analytical method is doubly difficult or even impossible. With the development of large-scale integrated circuits, more and more analytical methods can not work. At the same time, the numerical simulation is developed in a surprising speed. Based on the basic equations of semiconductor devices, it aims at obtaining the device parameters and characteristics by numerically discrete. The basic model in this paper comes form the the various processed physical quantity and basic equations of semiconductor.This paper particulatly introduces the basic model of semiconductor device that based on silicon materials, including the drift diffusion model, the composite rate model and the mobility model. So far our country didn’t have a truly universal semiconductor simulation software. Now what our country’s semiconductor design engineers use are foreign commercial softwares. Not only is the price of the sofeware so expensive, but also the advanced model are not opened for our users. This phenomenon terrifically limited even hindered the development of the semiconductor device industry in china. The basic model of semiconductor device studied in this paper lays the foundation of the production of semiconductor device simulation software. The research of silicon material is the most mature technology in all semiconductor material, and it also has enough information, so we select it as initial material for study.This paper is roughly divided into two parts: in the part of theory, I firstly present the drift diffusion equations that semiconductor devices must follow, and then introduce the discrete based on the equations by using the finite volume method. Now we can obtain another equation based on the specific grid point. Then program and solve it. In addition, the paper also introduces some basic semiconductor knowledge, for example explaining the conductors, semiconductors and insulators in the view of the energy point, the movement of electrons in semiconductors and the solving of potential in various boundary conditions.In order to verify the correctness and usability of this software, we specifically simulate some basic semiconductor devices: The PN junction diode, Schottky diode, the two dimensional PN junction diode, the reverse characteristic curve of diode, the triode and the MOS devices. Each device has the process of modeling, potential solution, IV curve of solve and verification, modification.