Study On The Numerical Calculation Of Semiconductor Heterojunction Devices

With the huge demand for the chip industry, new semiconductor devices are increasingly emerging nowadays. Due to their unique physical properties, heterojunction devices have been widely used. Therefore, the study of the numerical calculation of heterostructure devices has important applications.This paper uses the drift-diffusion model as the basic semiconductor physical simulation model. Due to the unique structure of the heteroconductor devices, this paper deduces the calculation model of the heterojunction interfacial electric current density. These two models lay the theoretical foundation for numerical calculation of heterojunction devices. Then, this paper introduces the calculation method of numerical simulation of semiconductor. In addition, this paper introduces the basic physical theory of heterojunction devices, including the theory of band strctrue and the derivation of the built-in potential barrier. This paper also focuses on the derivations of the mobility models and impact ionization. As a very efficient numerical calculation method, this paper uses the finite volume method to discrete equations. When this paper has completed the transformation from the physical model to the mathematical model, the rapid development of computer technology helps us deal with the calculation of complex mathematical problems and obtain the physical characteristics.According to the semiconductor devices simulation software SDS, this paper develops the calculation module of heterojunction devices. This paper also consults the open source software Genius and the commercial software Silvaco. Then, this paper use the calculation module to simulate three different heterojunction diode to obtain the basic physical properties.By comparing with the simulation results of Silvaco software, this paper draws the conclusion: this semiconductor heterojunction calculation module is correct, which can simulate the basic physical properties of heterojunction devices, and can also obtain accurate simulation results.