Research The Key Technology Of SiGe BiCMOS Radio Frequency Power Amplifier

As the increasing use of the mobile internet, people have a raising requirement on the speed and stability of the wireless communication, which drives the rapid development of the wireless communication technology. By measuring peak downlink speeds,the4G LTE technology has breakthrough99Mbps and the latest802.11ac WLAN standard help to increase the data rate to1.3Gbps. As the core functional part of the mobile communication technology,RF power amplifiers get a rapid development.And the update of the mobile communication standard presents an unprecedented challenge for the RF power amplifiers.Thus, the design of RF power amplifier with high linearity and efficiency becomes a hot spot in research.In this paper,the main research results are as follows:(1) This paper researches the key technology about RF power amplifier such as Loadpull, Bondwire, bias circuit, Powercell’s layout and the design floor of the power amplifier. In Loadpull section,A1.95GHz power amplifier’s Loadpull is used as an example to explain how loadpull works. And the test result show the maxim output power is22.8dBm at10-j*30ohm.The area of the emitter is256μm2In Bondwire section, the HFSS simulaton and test show that the1mm6mil Bondwire equals to1nH inductance. In Powercell section, three structure powercell with emitter area3840μm2test the gain is9dB,8dB and5dB.Then give the explain about it. In bias section, this paper analyses three bias network’s effecting of the equaling quiescent bias by simulation.(2) Incorporation with the design flows of the paper proposed, the estimate Bondwire model and the test result of the powercell,This paper also designs two power amplifiers.The first one is a class A power amplifier working on the2.3GHz TD-LTE communication system using0.18μm SiGe BiCMOS technology. This power amplifier uses three stage common emitter SiGe NPNs to amplify the signal, and has talking and closing mode.The test results show the output1dB compress point is27dBm,and the PAE is12.6%.(3) The other one is use0.18μm SiGe BiCMOS technology and design for UHF RFID. The power amplifier has differencial input and single output structure, integrated on chip balun. The post simulation get the power amplifier’s output ldB compress power is26dBm and the PAE above45%.This paper analyses the difference between2.3GHz and900MHz power amplifier in the design and how to application the key technologies.This paper is supported by "Core electronic devices, high-end general chips and basic software" national projects,"Embedded multi-mode, multi-band transceiver hard core of key IP"(No.2009ZX01034-002-002-001),"Science and Development Fundation Projects of ECNU""RFID integrated chip key technology research" and "State Key Laboratory Open Project of ASIC&System,Fudan University""Reserch Key technology of EoC/EoW dual mode " transceiver for wide band short distance connect.