Design And Implementation Of C-band And P-band Low Noise Amplifier

With the rapid development of wireless communication technology, low noise amplifier as one of the important components of the wireless communications receiver front-end, has gradually become a research focus in recent years. Due to the performance of the low noise amplifier has a great impact on the performance of the receiver. Therefore, research and design of high gain, low noise,wide band, miniaturization of high-performance low-noise amplifier, has a very important practical significance. This thesis based on the basic theory of low-noise amplifier, first introduced the basic theoretical knowledge of microwave circuit, and then analyzed the various performance indicators of low-noise amplifier and its design method, and finally, the operating frequency in both C-band and P-band low noise amplifiers are designed on this basis.The former two chapters of this thesis, describes the significance of microwave low-noise amplifier, its development status and trends, and the basic theoretical knowledge of the amplifier circuit. In the third chapter a detailed analysis of the various performance indicators of the low noise amplifier and design method is given.In the fourth chapter, a working from5.4GHz to5.9GHz low noise amplifier, was designed by using Agilent’s high electron mobility rate transistor ATF36077, small-signal model S-parameter method and the two-stage structure. Among them, both the before class and after class of the low noise amplifier are designed in accordance with the best noise figure and maximum power gain of the matching network, the offset circuit is designed with high impedance quarter-wavelength impedance transformer and termination fan open route to isolate the AC signal.The amplifier performance is simulated and optimized useing simulation software ADS2008via the schematics and unite Momentum.Finally the low noise amplifier is manufactured according to the layout which designed by the software Auto CAD, after debug, test results can basically meet the design requirements.In the fifth chapter, a broadband low noise amplifier working from the100MHz to1.0GHz is designed by using Agilent’s high electron mobility rate transistor ATF54143, via parallel resistor negative feedback and Ⅱ type impedance attenuation network. The performance of simulation results is good, the desired design requirements is achieved.