The Key Parameters Of Simplified Spice Model For Small Size Mosfets

Integrated circuits experienced by small and large scale, so far to the very large scale integrated circuits, continuous improvement and integration circuit mainly comes from the size of semiconductor devices and continuous improvement of production process. With the scale enlargement of integrated circuit technology and complicated with manual techniques,methods of experiment to complete the circuit design is not likely to be able to accurately for integrated circuit design and analysis, it is necessary to use computer aided design simulation software. SPICE is the most representative circuit design of simulation tools. In order to adapt to the integrated circuit technology and circuit simulation technology development, the SPICE has established several levels of the MOSFET model.Due to the narrow-channel effect and the short-channel effect and some other effects, MOS3 model is no longer suitable for small size MOSFET. BSIM model is accurate for the short-channel MOSFET, but the model contains a large number of parameters and calculation is too complicated.According to the situation above, we select a NMOS as an example, based on the theory MOS3 model calculation and simulation results BSIM model analysis, find out the key parameters of simplified MOSFET model by calculation, and the model parameters were fixed to apply the LDD and the HALO structure of small size MOS transistors. As MOS3 model parameters is much less than BSIM model, so we can transform MOS3 model into a simplified model for namo-MOSFET...