| Semiconductor device is widely applied because of its small size and long service life. It has been an important component of modern electronics technique. Due to the on/off characteristic of P-N junction to the forward and reverse current, semiconductor diode often uses as switch in pulse circuit. However, as the capacitance effect of the diode P-N junction, diode parameters such as reverse-recovery time must be studied before the diode can be used correctly as pulse switch. The paper aims to design a reverse recovery time of high-pressure diode testing system which has wider measurement range, more practical value, higher precision and lower cost.Firstly, the paper studed the reverse recovery process of the diode and its relevant application, and then indicated the importance of testing diode reverse recovery time. It also compared several testing schemes mentioned in the previous literatures and analyses their weaknesses and strengths. Then the achieving goal of the system design scheme and testing precautions were proposed. Finally, all testing system was divided into PC and test head.Secondly, the test head was designed by three parts:the intercepting of TRR testing waveform, the intercepting and conversion of TRR pulse, and the uploading of signal and the design of internal power. And then some difficult circuits and function were discussed, and the selection of main chip and devices is analyzed.Thirdly, two parts were described for the PC module. This paper discussed the thesis of the various parts, and gave the frame diagram of the hardware module system. And then the software program flow chart was showed and some important program code is given, and realization of software was introduced. Finally, the paper carried out the error analysis to the design scheme and sumed up the functions and innovations of the whole system. By comparing the system in the operation of the factories with the oscilloscope results, the result shows that the scheme is feasible. |
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