Design And Fabrication Of 1700V Fast And Soft Recovery Power Diodes

Between the end of 80’and the start of 90’of the 20th century, the power semiconductor devices(power MOSFET and IGBT etc.) compound of high frequency, high voltage and high current have successfully developed, and supported by rapid development and commercialization, marks the traditional power electronics has been come into the era of modern power electronics. Novel power electronic devices, such as the GTO, MCT,IGBT, and so on, require a fast recovery diode (FRD)parallel with it, reactive current through the load, reduce the charging time of capacitor and contain the high induction voltage because of the instantaneous load current reverse. Research of FRD products have been started more early in abroad, and they have reached mass production at 90’ new power electronic devices application in power electronic industry started more late in our country limited by market and technology, the key reason is we didn’t master the process and technology of power device.Based on domestic production of FRD main concentrated in 600-1200V of status, this topics study the structures、use TCAD to simulation and optimization the process condition and device structure for 1700V FRD devices, through the establishment and development of process technology on the 8" production line, to solve currently technical problems in ultra high-voltage FRD device for IGBT module production. Through the combine with R&.D、colleges and production lines to provide independent technical support, improve technical level of the IGBT and matching FRD, enhance the IGBT application on our power electronic industry and other areas.