Studies On The Novel Lifetime Control Technique Of Fabricating Ultra Low Leakage And Fast Recovery Diodes

Power fast recovery diode, which is abbreviated to FRD, is one of the key devices in modern power electronic technology. In the power electronic circuits, FRD is usually parallel connected with three-end power devices as their freewheeling diode. A lot of works has been done to reduce the reverse recovery time and improve the general performance in the international power devices'research field. They focus on the design of device structure and lifetime controlling technologies. And the local lifetime controlling technology gains more attention because it's advantage of axial local diffusion.To improve the FRD's general performance ,this study proposal a novel technology combing the local Pt diffusion and electronic irradiation. The local Pt diffusion is formed by the Pt gettering by the hole defection deduced by hydrogen irradiation. The irradiation energy and dose definite the axial position and dose of the local Pt diffusion respectively. This combine the advantage of the hydrogen irradiation and the Pt diffusion. Electronic irradiation, is widely use in manufacture of semiconductor products. In order to reduce reverse recovery time ,we determined to adopt it.The writer have certified the theory by simulation. The sample with low emitter efficiency has completed as the method of above. This lead to the greatly decrease of the reverse recovery time and the low reverse leakage and forward voltage, especially the excellent temperature character of the leakage. The test date shows that the samples reach the first class of international level. And this will contribute to the study and development of the power semiconductor device research in our country.