Research On CMOS Wideband Amplifier Design Technology

With the rapid development of the telecommunications industry and CMOS processes in recent years, RF integrated circuits based on CMOS technology is in abundant need. Compared with narrowband system, broadband and ultra wideband systems have an edge in high speed, low cost, low power consumption etc, which stand for the developing direction of communication market and become a hot topic of study on communication technology nowadays. The wireless RF front-end circuit based on CMOS consists of transmitter and receiver, as the low noise amplifier is the key part of the receiver. Besides, in wireline communication system, transimpedance amplifier as front-end of optical systems is one of the most critical blocks in the optical receiver, which determines the performance of the whole optical system. So it is very significant to research on CMOS wideband amplifier.The paper briefly introduces the research status and significance of CMOS wideband amplifier, and compares of several structures of them. The LNA and TIA used in wideband are designed with the technique of bandwidth enhancement and wideband input matching network. The LNA has realized two circuis with different bandwidth ranges by applying Butterworth and Chebyshev filters as input matching networks.Finally, the circuits are designed under 0.18μmCMOS process, and the spectre RF simulation results show that the proposed amplifiers have good performance in bandwidth range, noise, gain, stage matching, and power consumption.