The Research And Design Of Microwave Broadband Low-noise Amplifier

As the rapid development of wireless technology, microwave broadband low noise amplifier, as an important part of microwave communication, radar, anti-electronic, and so on, will directly affect the performance of the entire system. High performance microwave receiver system has be restricted by wideband and low noise amplifier. In this thesis, the matching of broadband the structure and features are analyzed and studied.The main contents included in this thesis are as follows:Microwave broadband low noise amplifier research significance, the development status and research trend are introduced in the former three chapters of this thesis, and the basic principle of low noise amplifier and technical indexes are introduced. Five types of structure for broadband amplifiers are analyzed, such as negative-feedback amplifiers, lossy matched amplifiers, balanced amplifiers, distributed amplifiers and actively matched amplifiers.A wideband low noise amplifier using series resistive feedback is presented in the fourth chapter. The amplifier is designed and fabricated in the standard 0.20μm pHEMT technology. The amplifier achieves 33 dB of power gain with 2 dB variation over the 4.0 GHz to 8.0 GHz frequency band, a matched input and output with less than -10 dB -12dB of reflection. The maximum noise figure is 2.0 dB and 1 dB compress point output power 3 dBm with 60 mA total current consumption from 2V supply.A broadband HEMT low noise amplifier, which operated in both X and Ku bands, was designed and manufactured using the lossy matching method in the fifth chapter. Having been measured from 8.0 GHz to 18 GHz, the amplifier achieved a power gain greater than 32 dB, with a good flatness of 3 dB only, input and output return loss of better than -7 dB, a maximum noise figure of 2.8 dB, and 1 dB compress point output power 16 dBm, draws 5V supply. The amplifier has simple input and output matching network.