Study On Mode Properties Of High Power Ridge Semiconductor Lasers

Fundamental transverse mode operation is hoped for many important applications of semiconductor lasers. How to achieve a stable single mode semiconductor lasers with high power output is still a great challenge for device design and production.This paper first reviews the development of high power semiconductor lasers, a comprehensive analysis of its modes. Based on the effective refractive index method is used to solve the ridge form of a semiconductor laser optical waveguide mode field distribution and then a ridge waveguide semiconductor laser mode field distribution is obtained by Matlab simulation. Through the analysis of this waveguide mode, the design of single-mode ridge waveguide was proposed for a new stripe structure with stripe width of 8μm. Its advantages is analysed. To solve wide strip laser filamentous luminescence is designed for gain guidance phase-locked miraball lasers, improves the device of mode characteristics. The preparation of the device cavity facet coating, and wet etching process for a better surface morphology of the ridge stripe device is studied.