0.15umphemt Ultra-broadband Mmic Medium Power Amplifiers

As the development of semiconductor industry, function circuits which are smaller in size and stronger in anti-interference are demanded by phased-array radar, electronic countermeasure, microwave communication and measurement. Monolithic microwave integrated circuit is welcomed due to its tiny size, low power consumption and robustness. Particularly, MMIC based on pHEMT has much more advantages in terms of high frequency and high power.A 17-43GHz MMIC four stages medium power amplifier, designed on a 0.15um gate pHEMT process, has demonstrated a 25±3dB gain with about 22dBm saturated output power across the band. A two stages distributed amplifier developed for the input stage and three stages single stage distributed amplifier for the following stage have facilitated broadband impedance matching and also have enabled the amplifier to operate as a frequency doubler or a frequency tripler across the K-Ka band. More than 15dBm output power is achieved over the 9-22GHz doubled frequency band for 9dBm input power, while about 10dBm typical output power is achieved over the 6-12GHz tripled frequency band under the same input power.