| Since the 1980s, rapid development's ultra large scale intertration technologycirc- uit (VLSI) technology has infused the new vigor for the high-pressrred big electric current semiconductor.one batch of new power component wsa born. And the most representative product is VDMOSFET transisitor. VDMOSFET has the same component's which the bipolar transistor and the ordinary MOSFET has. Regardless of being the switch application or the linear application, VDMOSFET is the ideal power component.VDMOS mainly applies in Motor actuates, invertor, UPS, electronic switching, high fidelity sound, automobile electric aplicance and electronic ballast and son electric circuits. Is precisely because its application is widespred, there for it faces the radiation environment is complex. In order to guarantee that its utilization reliablility, comducts the exposure research to it appears day by day important..This article induces the oxide compound from the radiation to the component the influence mechanism to embark stdudies the exposure to the VDMOSFET component's integral dose effect; the designed and has completed the VDMOScomponent's ionization exposure experiment. From the grid source voltage, the device dimension, the temperature and so on several aspects summarize the VDMOSFET component's integral dose irradiation effect. |
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