There exists a lot of cosmic rays and high-energy particles in the space environments. The on-board computer is very vulnerable to these rays and particles, which can produce varies of radiation effects. The bi-stable devices on the on-board computer such as SRAM may occur the single event upset effect (SEU), which will make a certain data in memory change from one state to the other. If the error that occurs in the memory can't be detected and corrected in time, it may cause the on-board computer to make mistakes or even appear more serious consequences. So it's absolutely necessary to make anti-SEU design for the on-board RAM.In addition, due to the high cost of satellites, people are apt to a satellite to complete as much tasks as possible, so the satellite will be integrated more functions. These different functions have different requirements to the capacity and anti-radiation performance of memory. Therefore, it's essential to improve the flexibility of the on-board RAM.Based on the consideration of the above problems, we design an anti-SEU RAM. In the design, we use adjustable memory configuration scheme. Also, we adopt the combination method of (22,16) extended hamming code and triple redundancy modular (TMR). This thesis describes in detail the Error Detection and Correction principle of (22,16) extended hamming code and TMR. Using VHDL we achieve the Error Detection and Correction circuits which are respectively based on extended hamming code and TMR. In order to verify the effectiveness of the design, we build an test platform using TMS320C6713 DSP, on which the software fault injection method is adopted to verify our design.RAM strengthened by our anti-SEU design, can config the memory online, and also can be used in two different kinds of Error Detection and Correction ways. At the same time, compared with typical EDAC chips, this system can realizes real-time error correction. |