6-inch Wafer. Microelectronics Contact Hole Etching Process Development

A new development procedure of Etch contact technology involved in 6-inch FAB at B company has been mainly proposed in this paper, which is base on the logical theory, applied a good number of experiment data when the parameters of P+ chain is abnormal.This thesis mainly consists of three parts:Section 1, Characteristics of bipolar circuit,RIE of Etch contact technical and P500 equipment capacity were introduced.Section 2, Etch contact recipe was set up and optimized in this section.It is introduce to acceptance parameters of the standard. There were three main parameters connect with Etchrate and Uniformity,which were Chamber pressure,RF power and Gas flow. Through the experimental results, finally get the best parameter combination.Section 3, It is was explored to solve the practical problem of P+ chain abnormally. First , find out anomaly caused by the reasons for contact damage and residual impurity. Second, add soft etch process can significantly improve the situation.Last, through the actual mass product,add soft etch except etch the substrate is the best solution.Considering the conclusion of all aspects, As a single Etch process technique development, the aim of this paper which was to explore the technical capacity of Etch contact with bipolar circuit on 6-inch was reached.