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The Design And Realization Of High-power High-speed Rf Power Amplifier

Posted on:2010-04-08Degree:MasterType:Thesis
Country:ChinaCandidate:C WangFull Text:PDF
GTID:2208360278954695Subject:Communication and Information System
Abstract/Summary:PDF Full Text Request
In recent years, Radio Frequency (RF) circuits are widely used in communication and computer industry with the ever rising work frequency. It is critical to achieve optimization on power, efficiency and linearity of large-power Power Amplifiers, which is a very important module of RF transmitter link.Through analysis on Power Amplifier (PA) principles, especially performance such as gain, output power, gain flatness and linearity, a design scheme of large-power RF PA in DTV transmitter is presented in this paper. LDMOS devices are applied to PA module of balanced structure. System linearity is improved using ADEF principle. Implementation of the entire circuitry, including RF amplifier circuitry and DC bias circuitry is mainly given. Simulation and test results of major performances, such as system gain and linearity, are provided.Ku-band solid-state pulse PA can be widely used in military field such as radar and electronic warfare. With small size, good linearity and high reliability compared with traveling wave tube, SSPA has become the major technique for next generation of radar.Theoretical analysis, module design and implementation are mainly based on how to improve power signal quality of pulse PA and switching isolation. A design scheme of Ku-band solid-state high-speed pulse PA is presented. Driver circuit and bias circuit of GaAs PHEMT PA module are designed using gate-controlled technology through analysis of PHEMT module. Implementation of the entire system and measured results of major parameters is presented.
Keywords/Search Tags:RF power amplifier, LDMOS, linearity, pulse power amplifier, PHEMT, high speed, gate-controlled technology, switching isolation
PDF Full Text Request
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