Theory And Design Of P Band Power Amplifier Based On LDMOS Device

Compared with silicon bipolar power devices,LDMOS microwave power device has the advantages of wide frequency band,high power gain,good linearity,high output power,high themal stability,no two breakdown and so on.At the request of high power,high gain,high linearity communication field has been widely used,especially the application on the mobile station.LDMOS is the first choice of microwave power devices,the mobile base stations occupy 90%of the market share of microwave power devices.With the processing technology of LDMOS microwave power device design is becoming more and more mature and the continuous improvement of reliability,LDMOS pulse high power application for new product development,the use of LDMOS pulse is constantly being pushed to the market.Research institutions in many countries have carried out the research and development of LDMOS microwave power devices.especially Infineon,NXP Freescale,and other companies have a complete set of LDMOSmicrawave power device production line,with a relatively complete series of products.?in this paper,the design of P band LDMOS microwave pulse power amplifier is discussed and studied based on the demand of the market.In the process of P-band LDMOS pulse power amplitifier,the paper research the three topics.the first topic mainly discusses the principle of LDMOS pulse device technology,which will be described in the content of the second chapters.The second theme is researching pulse circuit model device in LDMOS,as the key components of the design of amplifier.It is the base for the design of amplifier circuit,it will be discussed in detail in chapters three.The third theme is researching the P band amplifier design process,which includes the amplifier design principles circuit topology,amplifier input and output matching network design,amplifier reliability and stability of amplifier design and analysis of test result and so on.it will be discussed in detail in chapter four and chapter five of the paper.Finally the developed P-band microwave power amplifier in the 4XX-6XXMHz frequency band.The pulse output power of 200 watts in the bands,the power gain over 48dB,and the most power added efficiency is 55%.