| Modern VLSI is based on the MOSFET composed by digital and analog circuit,so it is necessary for a high performance circuit with an accurate MOSFET model.But by now the purpose of the most popular BSIM model is for digital circuit,then there is some problem for such circuit as small signal design especially for low power and low voltage application,the simulation has some limited in MOS switch from weak conduction to strong conduction,from non-saturate status to saturated status.The charge model can fix these problems,but this model need nonlinear and complex calculation,while the parameter has some difficulty to extract.EKV model is a simple model with simple application in analog design. It is developed by Ecole Polytechnique Federale de Lausanne(Suisse)[Enz '95],Oguey-Czerveny suggested an experienced math formula,which can express the current from the weak inversion to strong inversion,Enz, Krummenacher and Vittoz did more reach to make it to meet the analog circuit application.And this experienced formula can also be expressed from physical point.The EKV model advantage is that it use the bulk voltage as reference voltage,so it is obviously that it is symmetrical operation,and it is very easy to be used in analog circuit.EKV model is based on the pinch-off voltage Vp for the MOSFET current calculation,in the paper,EKV model is verified according to a 0.18um N-MOS. |
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