Ccd Image Sensor Like Element Modeling And Simulation

In our age,the country and company which master the new CCD technology regard it as military secret or business secret and do not make it known to public becauseof its importance in the aeronautical and remote measurement field. So the Literature and information about CCD technology is still lacking although CCD technology developed so fast in the past few years. The CCD technology in China has been lagging far behind because the semiconductor industry in China developed late relatively. Now it is necessary for us to do some research in this field with the rapid development of aerospace technology in China.In this thesis, by fully understanding the development of the CCD image sensor device and mastering the principle of the CCD, we developed the BCCD model with pinned photodiode structure. Then we optimize the model through simulation and analysis. Major work can be summarized as the following six aspects:1. We Model the CCD pixel, design the device and physics parameters, and simulate its photoelectric properties with ISE and Silvaco TCAD tools. The specific details described in chapter III section 3.1.2. We design the proper voltage applied to the poly-gate by analyzing and calculating the potential well capacity of the CCD channel. The specific details described in chapter III section 3.2.3. We determine the maximum channel doping concentration by analyzing the change of the doping concentration in the channel zone on the breakdown characteristics of the device. The specific details described in chapter III section 3.5.4. We discussed in detail the gate gap length and depth of buried channel on the impact of charge-transfer efficiency. The specific details described in chapter III section 3.3 and section 3.4.5. Analysis of dark current withτ,NSS and temperature, the results illustrate the advantages of the sturcture. The specific details described in chapter IV section 4.1.6. We come to the CCD image sensor dynamic power estimation method by calculation of dynamic power consumption. The specific details described in chapter IV section 4.2.