Sige Hbt Monolithic Integrated Circuits: Low-noise Amplifier (lna)

Along with the developments of wireless communications, Bluetooth, radar and space technologies, it becomes more and more severe to the electronic characteristics & cost for RF modules. Low Noise Amplifiers(LNAs) is essential part to RF modules, its specifications are directly influence to the whole RF circuits and systems. The novel Hetero-junction Bipolar Transistors(HBTs) have been constantly researched in recent years around the world. They have many merits to satisfy the requirements of its markets. SiGe HBTs is one of them. Because SiGe HBTs's circuit have good representation on high frequencies and it is also more cost-effective, compared to GaAs's, Moreover, it can be integrated with CMOS technology, SiGe HBT LNAs become one of great demand topics in the domestic and overseas study.In the thesis, the noise theory is firstly analyzed and the general noise measure ways are introduced. Then, the developments of SiGe HBT in the domestic & overseas countries are simply discussed. In the device basis and design, the device theory is presented, the SiGe HBT's optimal design is also discussed. It includes the choice material of base and its design, emitter and collector structures design. The device model is also proposed.The Gummel-Poon model parameters are added to ADS(Advanced Design System 2004A) software as the original SiGe HBT model in the project. Using negative feedback technology which is discussed in detail, two cascade Ultra-Wide-Band Low Noise Amplifiers(UWB LNAs) is presented. Compared to other LNAs, the UWB LNA has specifications: its gain≥12dB, Noise Figure≤1.2dB, P-1dB =-25.4dBm and power≤50mW in the whole 0.5-6GHz frequencies.At last, the layout design is completed by means of L-Edit software according to the schematic. Because the small value of a spiral inductor is only used, the whole MMIC area is relatively smaller than others.