Investigation On Noise Performance Of Silicon Raman Amplifiers And Silicon Raman Lasers

The advantages of silicon-based optical devices lie in the compatibility of materials and processes with existing large-scale integrated circuits. In recent years, silicon Raman amplifiers and lasers has been demonstratged by experiments. Two main nonlinear losses in silicon are two-photon absorption (TPA) and TPA-induced free-carrier absorption (FCA), which have significant impacts on optical gain and lasing in silicon. So we must optimize them to avoid adverse effects. Relative intensity noise which is described as small amplitude perturbations on the pump, will be transferred to Stokes during light amplification and lasing. It has impacts on the performance of silicon Raman amplifiers and silicon Raman lasers. The main works of the dissertation include the contents as follows,1. For the second-order silicon Raman amplifier, The spatial modulation index equations of intensity of the transmission light and complex equations are derived. Then we carry out numerical simulation based on above equations. Making use of the simulation we do the research on RIN transfer Characteristics, gain characteristics, noise figure of silicon Raman amplifiers and the impact of RIN transfer on noise figure of silicon Raman amplifiers. At last we do a comparative analysis between first-order and second-order silicon Raman amplifiers.2. Deriving theoretically steady-state equations and small signal optical transmission disturbance equation. Then we carry out numerical simulation based on above equations and study the impacts of RIN transfer on the first-order silicon Raman lasers under different pump power and free carrier lifetime. The impacts of RIN transfer on the performance of silicon Raman lasers are discussed.