| Solid-state power amplifier(SSPA) has the advantages such as low noise,low DC supply,high efficiency,high reliability and so on. It has been widely used in wireless communication, jamming, imaging,identifying and navigating systems. 3G technology is the most interesting technology in the world now. It will bring application market of 38 billion dollar in the coming future from the survey reported by iSuppli company [1]. PA which amplify 3G RF signals should have good linearity, high efficiency, hign output power and so on. We developed a S-band hectowatt-level SSPA for 3G base station in this thesis. The developed PA can be not only used for the WCDMA or TD-SCDMA basestation, but also for high power microwave in the same frequency range. We place emphasis on S-band high power SSPA design in the thesis. We has studied some key issues such as wide-band matching and high power combining techniques to implement S-band hectowatt-level CW SSPA.Through theoretical analysis and simulation,we have designed the 180 watt power amplifier module. The designed PA module will be power unit for kilowatt microwave amplification system by power combining technique in the next step. From simulation,the designed 180 Watt final-stage PA has a P1dB of larger than 50dBm, associated with a PAE of 47% in the frequency range from 2.0GHz to 2.3GHz.In the small signal condition, PA gain is (14.2±0.5)dB in 2.0～2.3GHz under two-tone test with f1=2.138GHz and f2=2.142GHz, PA ouput power is larger than 43dBm with the IM3 of less than -43dBc. PA saturation output power is up to 53dBm with a efficiency of 60%. The designed 40 Watt driving amplifier which operating in the frequency range... |
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