Research On Preparation And Optical Properties Of NiO Thin Films

NiO is a kind of semiconductor materials which is widely used, it is usually existence in the form of green ore. Its molecular weight is74.70, it has a cubic crystalline structure. NiO has many excellent properties as functional materials; it has a good application prospect in thermosensitive elements, gas-sensitive elements, light detectors and other electronic components.There are many methods to form NiO thin film, it includes pulsed laser deposition (PLD), Sol-gel, metal organic chemical vapour deposition (MOCVD), spray pyrolysis, molecular beam epitaxy (MBE) and so on. The properties of NiO thin film is strongly depend on the preparation methods, and each preparation parameters strongly effect on the thickness, the surface morphology, crystallization and optical and electrical properties of NiO thin films.In this paper, NiO thin films were grown on by radio frequency reactive magnetron sputtering method. The effects of sputtering technological parameters such as the sputtering pressure, sputtering power and the O/Ar ration of NiO thin film on the structural and properties of NiO thin films were investigated.Based on the successfully preparation of NiO thin films, the NiO-based ultraviolet detector with a pn junction structure were fabricated and the ultraviolet photosensitive properties of the device were investigated. Finally some conclusions were drawn.