Study Of The Reliability Of High Power Semiconductor Quantum Well Lasers

This paper consist of five aspects, as follows:The first one , this paper showed that fabrication process of high power semiconductor quantum well lasers , -808nm , 915nm LDs , at the same time ,we measured and analyzed the LDs ,the Results, as follows : the maximal outpowers of 808nm, 915nm is 0.9 W and 0.66W,and slope efficiency is 0.82W/A, 0.43 W/A, respectively.The second one : we studied the effect of temperature on performance of LDs . It was found that threshold current increase exponentially outpower and slope efficiency decrease parabola and exponentially respectively .coefficient of temperature shift is 0.24/K, wheras characteristic temperature also decrease with rise of temperature.The third one , we calculated the local facet temperature theoretically and experimentally when LD are operated , the former, we used the Henry's model , however , the latter ,we chose the photoluminescence and Raman spectra ,finally ,we found that accuracy of PL is better than that of Raman spectra , however ,theoretical results is higher than trial results , but theoretical results accorded with PL when operating current increase .The fourth , electric derivative testing techinque at the constant current (500mA)and temperarure(40C) . we study the reliability of LD , and analyzed the reasons,We measured more than the InGaAsP high power semiconductor lasers with electric derivative technique , and analyzed the relation between the electric derivative parameters, m, b, h and reliability of devices . we find that there usually exist peaks in the electric derivative curve and optic derivative curve of high power semiconductor laser, these two kinds of peaks are related properly , the peaks with reliability of device .while the peaks with relation with the reliability of device ,while the peaks with same direction are usually related to the inner defects, same directin are usually related to the inner defects, carrier leakage and current leakage , so , the device with same direction peaks is usually unreliable one .The last one , in order to use the devices right ,we analyzed the kinds and reason of degradation and failure.