By Lpcvd Method, The Growth Of 3c-sic On Silicon Substrates

Silicon carbide (SiC) is a promising semiconductor with wide band-gap, high saturation electron drift velocity, high breakdown electric field and high thermal conductivity. The aim of this thesis is to prepare single crystal 3OSiC thin film on single crystal Si substrate. Due to the large lattice parameter mismatch (20%) and the large thermal expansion coefficient mismatch (8%), a buffer layer is crucial in order to ensure a smooth transition from the Si substrate to the SOSiC layer. The carbonization of the Si substrate is essential and it plays important role in 3OSiC epitaxy. In this thesis, we use "Two-Step CVD Technique " to solve this problem, that is to carbonize Si substrate in carbide gas atmosphere first in order to form a Sio-rtd (0