The Study Of Improve The RRAM Performance By Nano Tip

As the very large scale integrated circuit is developing rapidly, conventional Flash memory has met many challenges, such as quantum tunneling and capacitive coupling effect, and cannot follow the Moore's Law. In order to meet the demand of continuing Moore's law, adopting new concept memories is inevitable. New concept memories based on resistive switching mechanism is attracting more and more attention both from the industry and academy. Resistive memories have achieved rapid progress recent years, but there are still some critical problems to be solved. The resistive switching mechanism and carriers transport in the RRAM are still not clear, the variation of the switching parameters still need to be improved, the switching power need to be lowered and the leakage current problem in the array integration. This thesis focuses on the improvement of the parameters variation. The work mainly includes the following two areas.(1) Using the ICP etching process to fabricate the tip with the diameter of 13.51 nm.(2) Comparing the switching parameters between two RRAM decice with plane and nano-tip structures. The Vset?Iset?Vreset?Ireset?Roff and Ron of the two devices are coplared based on Weibull satistical function. We found the nano tip structure really can improve the distribution of RRAM effectively.