In Pecvd Process Conditions Affect The Passing Rate Of The Device And Its Optimization

In this paper, the effect on percent of pass was studied from PECVD technology parameters.The experiments show that unreasonable PECVD technology parameters could induce deviations between designing values and parameters of small current transmitted gain of bipolar device and threshold voltage of MOS device, which results in percent of pass lowered in the edge of the silicon wafer. Using orthogonal analysis method, the effects of technology parameters on properties of devices were developed, and optimized the technology parameters to use in producing. It was verified that optimized PECVD technology could effectively resolve the problem of smaller percent of pass in the edge of silicon wafer to satisfy the requests of the capacity of producing and quality.