The Study Of The Coating Of Silica Glass By PECVD

In this paper, Plasma Enhanced Chemical Vapor Deposition (PECVD) technique was used to deposit the SiO₂ films on the Si substrates wafer with Tetraethylorthosilicate (TEOS) organic and Oxygen (O₂). The materials were used the PECVD P600 machine. The optimal experimental condition of coating is determined by the analysis of different technical parameters such as RF power, deposition temperature, the flow rates of O₂, chamber pressure and deposition time. Variations of deposition rate, the stress and refractive index under different experimental conditions were discussed. The silica films were analyzed with XRD, SEM, microscope, etc. And several factors affecting the structure of consolidated films were discussed. The results shows that the SiO₂ thin film was smooth, dense, and structurally amorphous.