| X-ray dose enhancement effects was found in 1970s, because of its badly damage to electronic devices and circuits, the design and hardening processes of devices must be considered the dose enhancement effects. Materially dose enhancement is a kind of total dose effects, it has to do with the radial energy, material structure, metal types, and so on. Along with the widely application of heavy metal material in Large Scale Integration, dose enhancement effects become more and more serious. Using the 80C196KC20 singlechip as experimental sample, the dose enhancement effects of system circuits and cell circuits are studied in X-ray andγ-ray irradiation environment.Laws of interaction between X-ray and matter are introduced, as well as the rules of X-ray absorbed by matters. And from these laws the physical mechanism of dose enhancement is found. The dose enhancement of material, devices,integrated circuits and the calculation formula of devices dose enhancement effects are also introduced.The experimental principles of singlechip system circuits and cell circuits are studied, according to these principles, the operating scheme is made. In X-ray andγ-ray irradiation environment, the dose enhancement effects of system circuits and cell circuits have been studied, as well as the influence of cell circuits on system circuits.Results of experiments indicate that the method of comparing and contrasting X-ray irradiation withγ-ray irradiation to study the dose enhancement effects of system circuits and cell circuits is viable. Under dynamic bias condition, system circuits and cell circuits exist dose enhancement effects, adopting relative and absolute failure criteria, the X-ray enhanced factors of system circuits and cell circuits are measured, using absolute failure criteria to study the dose enhancement effects of system circuits is proper. We can leave out of account the dose enhancement effects of system circuits and cell circuits when the irradiation dose is small. |
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