The Growth Of The Zno Films By The Metal Organic Chemical Vapor Deposition

In recent years, Zinc Oxide, ZnO, as a new kind of semiconductor materials, has been deeply researching on growing, synthesis, device and application.As a new wide bandgap semiconductor material in the field of semiconductor material, ZnO research work has been got more and more attentions, because of its many advantages. For instance, ZnO could be growing in room temperature, stable performance, easily growing, easy synthesis, and ZnO could grow on different substrates in low temperature environment. Due to the advantages of ZnO material, ZnO TFTs own the potential instead ofμc-Si TFTs. This paper uses the method of Metal Organic Chemical Vapor Deposition-MOCVD, studying on growing of ZnO film on different substrates: Corning glass, ITO (Indium Tin Oxide) and Si. We mainly are doing research into growing environment, in other words, what are the influences of ZnO film growing quality from oxygen source? Using different test methods including X-ray diffraction (XRD), Photoluminescence (PL) Measurement, Atom Force Microscope (AFM) observation and so on, we showed some characterizations about the crystal growth quality of ZnO film and relevant electrical parameters.