| Due to a number of commercial, scientific and defense applications, there exists a high demand for solid-state ultraviolet (UV) light emitters and photodetectors. Group III-nitrides are very promising materials for fabrication of these because of their large direct bandgap and high thermal stability.; MOCVD growth of III-nitrides along with characterization of the material has been performed aimed towards development of UV optoelectronic devices. Photodetector arrays operating around 280 nm wavelength range have been fabricated from epitaxial structures grown and UV LEDs with wavelength shorter than 300 nm have been fabricated.; Technological challenges in improvement of these devices have been identified and roadmap for future research has been proposed. |
