Research And Fabrication On InP-Based Device In Photoreceiver

As the information age comes, the demand for communications accelerates rapidly. Information technology in the 21st century is an integrated high-tech based on the information functional materials, in which microelectronics, optoelectronics and photonics technologies are merged together. The next generation optical communication is the optical network evolution of intelligence, integration, low cost and high reliability, and therefore optoelectronic devices also have a higher demand. Compared with the discrete optoelectronic components, optoelectronic integration (OEIC) devices have advantages of smaller size, lower parasitics of connection, lower cost, superior performance and higher reliability. Integrated optoelectronic devices have already attracted tremendous attention around the world.The research works described in this dissertation were supported by the grants from many research projects, including national "863" project undertaken by Prof. Huang Hui:"Independent innovation, high-performance monolithic integrated tunable demultiplexing optoreceiver device" (No.2006AA03Z416), Ministry of Education:"Changjiang Scholars and Innovative Research Team in University" (No. IRT0609) and "111 Project" the second construction projects (No. B07005).In the design of OEIC photoreceiver front-end, since HBT as the front end amplifier can improve the frequency characteristics of the device, it has many attractions in the optical communication field and can integrated with detectors on one single chip, which has the advantages of one-step epitaxy, simplicity of fabrication and high reliability. As one of the promising devices for high-speed applications, HBT has bright future and so attracts much attention in the world.In the optical communication field, at first the photoreceiver converts optical signals to electrical signals (demodulation). This process can be achieved by avalanche photodiode (APD). APDs are the high-sensitivity detectors utilizing avalanche multiplication effect and are widely used in high-speed optical communications, signal processing, measurement and sensing systems.1, participated the experimental fabrication works of the InP/In0.53Ga0.47As HBT device. Vce=1.0V, Ic=12mA, AE=3×10μm2, the InP-based HBT's current gainβwas 50,fT was 48GHz, and fmax was 31GHz.2, The high-frequency small-signalΠequivalent model was introduced. The PSPICE design and simulation of the HBT high-frequency small-signal equivalent circuit and of the photoreceiver front-end transimpedance amplifier circuit was carried out for optimization. The impacts of three parameters (bias, transimpedance and load) on the characteristics of gain and bandwidth were discussed. The increasement of bias VBE results in the increasement of fT; the decreasement of transimpedance Rf results in the increasement of fT; the decreasement of load RL results in the increasement of fT. However, the increasement of fT will affect gain characteristics of the amplifier, in practice the compromise choice need to be made to get an optimized sullotion.3, The InGaAs/InP APD material growth structure fabricated in our laboratory was introduced. The post process of InP-based APD devices was systematically summarized. And the testing results were analyzed. Experiments show that the epitaxial growth structure could be used in the preparation of APD devices.