Frequency Performance Analysis And Parameters Extraction On InP-Based HBT And The Circuit Design Of Photoreceiver's Front End

The research works described in this paper were supported by the grants from many research projects, including Doctoral Subjects Research Grants of Ministry of Education, "Monolithic OEIC photoreceiver modules based on RCE photodetectors and HBT" (20020013010) and National Basic Research Program of China, "Basic Research on Integrated Optoelectronic Devices and Microstructure Optical Fibers with Structure and Technology Innovations for Future Advanced Optical Communications" (2003CB314900).Nowadays, optoelectronic devices face the turning point that optoelectronic integrated circuits (OEICs) are rapidly replacing discrete devices, because the former offer the advantages of smaller dimension, lower parasitics, lower cost, better performance and higher reliability compared to the latter. OEICs have already become extremely attractive domain as the fundamental research subject in the area of optical communications and optoelectronics.InP-based HBT have many attractions in the field of Fiber-Optic communication, and they can integrate with photodetectors with shared epitaxial layers on a single substrate, so the research on InP-based HBT has bright future and attracts much attention in the world.This thesis focused on physical configuration model, frequency performance analysis, parameters extraction, experimental fabrication of InP-based HBT, and PIN+HBT front-end circuit design. In this paper, the author has obtained the results as the following:1. Proceed from physical characteristics of device, the small-signal equivalent circuit model of HBT had been constructed. The expressions of each model parameter had been derived out, analyzed the factors which affect each model parameter. The factors which affect frequency performance of InP-based HBT were analyzed and simulated, including the influence of configuration parameters, bias voltage and doping concentration, the conclusion might be very useful to instruct the design and optimization of InP-based HBT.2. Based on small-signalπmodel and industry model (GP model) of InP-based HBT, finished the parameters extraction of two models separately. Used these parameters to do the circuit simulation, the simulation results of model are quite corresponded with the testing results of real devices, which prove that the parameters and models are comparatively accurate. So it build good foundation for integrate design of front-end circuit and large scale photoreceiver system.3. Based on the models of HBT and PIN detector, we had designed PIN+HBT photoreceiver's front-end transresistance circuits. We used the circuit emulation software PSpice to simulate and analyze the front-end integrate circuit, which would be the preparation for designing the monolithic integrated photoreceiver.4. Finished the fabrication of InP-based HBT, using 2μm process line. Testing results of the device were described as the following: the open voltage was 0.43V, the break down voltage was beyond 3V, the cut-off frequency f_T was 28GHz;...