The GP (Gummel-Poon) Modeling Of HBTs And The Design Of OEIC Photoreceiver Front-End

Nowadays, optical communication is undergoing evolution to the new generation optical network with intelligence, integration, low cost, high reliability , so it requires advanced optoelectronic devices. HBT(Heterojunction bipolar transistor) is the essential element in OEIC(Optoelectronic integrated circuit), furthermore, it has extensive application prospect in the field of optical communication and microwave communication. Thus, deep researches on HBT modeling methods and its applications have extremely important meaning.This thesis mainly focuses on the modeling methods of HBT and its applications in monolithic integrated photoreceiver front-end. The achievements are listed as follows:1. Based on physical characteristics of materials, author analyzed the theory model and electrical parameters of HBT. Simulated and discussed the factors which affect the performance of HBT, including the influence of configuration parameters, bias voltage and doping concentration.Putted forward the optimization design scheme for HBT.2. Deeply did research on the parameter extraction methods for HBT GP large-signal model. Based on different physical properties, designed the SPICE parameter extraction methods for each parameter.By constructing error function in DC parameter extraction and using de-embedding method in AC small signal parameter extraction, the precision of model was highly improved. By comparison, the extracted GP large-signal model showed a good agreement with the measured DC and AC characteristics, the error between simulation result and measurement result was below 3%.3. Using heteroepitaxy technology, we successfully fabricated the GaAs based InP/InGaAs HBT with 3μm emitter width.The testing results were as follows: the turn-on voltage was 0.4V, breakdown voltage was more than 2V, DC current gain was about 20 and current-gain cutoff frequency was 7 GHz.4. Participated in the research of monolithic integrated PIN+HBT photoreceiver front-end. Based on the GP large signal model, author designed preamplifier and mainly analyzed the frequency domain and time domain characterization of circuits. Finally, the successfully fabricated photoreceiver front-end used transimpedance negative feedback one stage common-emitter amplifier with 3μm size style InP HBT, and the incidence mesa area of PIN photodetector was 22×22μm~2. When the detector was inversely based at 2.5V and the circuit was based at 2V, the 3dB bandwidth of photoreceiver front-end was over 3GHz.