Research On Nanocrossbar Device Simultion And Nanomemory Design

Intermixed with the approach to the limitation of the dominating CMOS technol-ogy is the emergence of novel competing solutions. Nanoelectronics will overcome the intrinsic restriction of the current semiconductor industry and become one of the most promising candidates who have achieved breakthroughs recently. In this paper, principle of several nanometer scale devices are described, a Universal Device Model is applied for nanoelectronics modelling. The benefits as well as drawbacks of nanometer scale devices modelling are also summarized.According to analyses the principle of UDM model, we proposed a simple curving- fitting method, which has high precision towards nanoscale crossbar devices. Moreover, we discussed all the relevant factors with effect of curving-fitting. This method can solve the I-V curve simulation of nanoscale crossbar devices with bi-stable state hys-teresis characteristic.Nano-scale cross-switch, with a simple structure and a mature fabrication, has been attracting more and more research. General method of access memory easily arise mis-reading.Grounding other nanowires will eliminate it.This paper reviews several classic nanocrossbar devices, introduces their storage mechanism and discusses the basic com-ponent of the memory arrays. We propose a new demultiplexer which makes it possible to address a set of nanowires parallel in a single array. Then we give several parallel ac-cessing methods and build a mathematical model for the best parallel accessing strategy.