The Study Of High-Efficiency Heat Removal For The High-Power Devices

At present high-power light-emitting diode (LED) is developing rapidly because of its light-emitting high efficiency, all-solid-state, light weight, no pollution, and many other advantages. High-power LED is expected to be widely used in communications, electronics, automotive, opto-electronics display and lighting market in areas such as the future.In this paper, we study in one of the key technologies about high-power LED chip------theresearch related to high-power LED heat removal. On the high-power LED chip heat removal theoretical analysis and simulation, we propose a high conductivity and thermal expansion coefficient matching gradient of Au-Au-AlN-Ti multi-layer material, it will be used as the heat removal channel between the LED active area and the copper rapid cooling plate; we have adopted Au layer of high purity as a connection instead of the traditional Au-Sn eutectic solder to achieve connection between the LED chip and the rapid cooling plate, it will be reduce interface resistance and contact resistance between LED chip, link layer and the rapid cooling plate . At last we can achieve higher heat removal of the high-power LED, at the same time we are prepared to research about the key technology of cooling channel.