Studies Of P-Si0₂ And P-SiON Films Deposition With TEOS By RF Glow Discharge

In this paper,plasma-enhanced chemical vapor deposition (PECVD) technique was used to deposit the dielectric P-SiO2 films and P-SiON films on the silicon wafer under the conditions of low temperature and low pressure with TEOS organic sourse. This research was focused on the evaluation of film growth,hardness,stress,resistance and refractive index,by changing the experimental parameters including RF power,substrate temperature,chamber pressure,and the flow rates of TEOS,O2,N2.The results showed that the P-SiO2 film was smooth,dense,and structurally amorphous. The growth rate was about 2600A/min under the center condition. A maximum hardness of 16Gpa was got on the substrate temperature of 410. The stress takes compressive properties about -75MPa. About the critical force on the scratch tests,it was 46.5uN. The SiO2 films had a refractive index about 1.46.The results showed that the P-SiON film was also smooth,dense,and structurally amorphous. The growth rate was about 2100A/min under the center condition. A maximum hardness is ISGpa. The film was under compressive stress after deposition with -60Mpa. About the critical force on the scratch tests,it was 45uN. The P-SiON films had a refractive index about 1.65.From the study,it is apparent that TEOS-SiO2 and TEOS-SiON films possess high quality compared with SiH-film as dielectric film and passivation film. Then it has higher safty and lower cost for mass production fab. Can be widely appled to IC manufacture field more and more.