Deposition Of Oxidation Silicon Films By HWCVD From TEOS At Low Temperature And Investigation On Properties Of RRAM Based On Ag/SiO_x/p-Si Structure

The rapid development of information technology in the 21 st century makes the demand for data storage higher and higher,which storage density,read and write speed,power consumption,device lifetime and price is the main factor of concern.Traditional flash memory technology continues to shrink and then to face a series of technical limits and theoretical limits below 20 nm node,which has been difficult to meet the higher density of storage requirements.The introduction of new materials,new structures,new principles and new integration methods to explore new storage technologies with better scalability and higher integration density has become the key to memory development.In a variety of new nonvolatile memory,the resistive random access memory(RRAM)itself has the advantages of low power consumption,fast speed,antiradiation,good scalability,simple process,compatibility with CMOS process and so on.In this paper,we have studied the performances and mechanisms of RRAM with Ag/SiO_X/P-Si Structure.In this paper,the development process and characteristics of resistive memory are reviewed firstly,and then the preparation,properties and application of SiO_X are also reviewed.The low temperature deposition of SiO_X thin films was realized by hot filament chemical vapor deposition(HWCVD)using tetraethoxysilane(TEOS)as the gas source.The influence of process parameters on the quality of the silicon oxide film was analyzed by SEM,FTIR and so on.The structure properties of the film,the growth rate and the refractive index were obtained.The RRAM device based on Ag/SiOx/P-Si structure was prepared and its conduction mechanism was studied.The research contents include the preparation of safety,low temperature and high performance SiO_X films and the Mechanism of RRAM device based on Ag/SiO_X/P-Si structure.The results show that,with the temperature increasing,the deposition rates of SiO_X film increase,the refractive indexs decreases,the compactness of SiO_X film decreases,and the film structure becomes loose.The RRAM devices based on SiO_X films prepared at substrate temperature of 300? showed obviously bipolar resistance switch characteristics.At this time,the SiO_X with less other bonds such as CmHn,COx,and so on.The density of the defect in the film is reduced.The insulation performance is improved.This make the RRAM deviceexhibit the resistance characteristic.The RRAM devices based on SiO_X films prepared at substrate temperature of 200? and 250? did not exhibit typical switching characteristics.At this time,there are a large number of CmHn,COx in SiOx,resulting in a large number of defects in the oxide layer.These defective state capture carriers,the film will greatly enhance the conductivity.The three-layer structure does not exhibit RRAM characteristics.