The Method Study And Implementation Of Temperature Control Based On Multi-chips MOCVD System

MOCVD (Metal Organic Chemical Vapor Deposition) is the growth technology of the third generation new semiconductor material GaN. The successful development of the Multi-chips MOCVD equipment will provide a broad prospect to the semiconductor material application. The temperature control system of graphite base in the MOCVD reactor has a direct impact on the quality of the growth of semiconductor material, but the equipment is characterized as " non-linear "," large time-delay ", so it is very necessary to make research on the methods of the temperature precise control of the system.This paper first briefly introduces the MOCVD system, as well as the temperature control object, control mode and control characteristics of the Multi-chips MOCVD equipment. According to the principles of system identification, analysis the experimental data and gets the static model and dynamic model of the temperature control system. After getting the simulation model, the simulation of some control methods and their hybrid methods are studied under the condition of the SIMULINK in MATLAB, summaries parameters regulating law and compares advantages and disadvantages of these methods, which provides a theoretical basis for the realization of the temperature control. Finally designes temperature control procedures for the MOCVD system and programes under the WinCC script of the upper computer.Now, the temperature control system of the MOCVD equipment runs well, it ensures the high-quality of the material growth. The result also shows that the temperature control program can fully meet the requirements of MOCVD system.