Strained BiCMOS Device And Stress Distribution

With high-performance, low-cost characteristics and good development prospects, so it is worth to study the SiGe BiCMOS device. Studying the stress distribution in strained silicon can guide how to enhance the device performance.This article analyzes biaxial strained material properties, especially on migration rate, the critical thickness and the energy band, which laid a theoretical basis on SiGe BiCMOS. Based on uniform bending assumptions, this article proposes model about how to calculation the stress distribution. Under the conditions of thick substrate, this article gives the simplification of the model. This model is worthy for designing and optimizating the SiGe BiCMOS. Finally, this article proposes a new model of SiGe BiCMOS, and uses MEDICI to make two-dimensional simulation analysis. It optimizates various parameters and has been satisfied with the electrical properties.In this paper, the calculation model for studying the stress distribution is valuable for enhance the device performance. The new SiGe BiCMOS model has broad application prospects.