Research Of Revelent Problems On Characteristic Measurement And Modeling Of Novel Photoelectric Devices

With the development of photoelectric technology, the photoelectronics devices show the growing importantce. A growing number of semiconductor photoelectronic devices are userd in the military and the national economy and other fields in recent years. As a variety of semiconductor heterojunction structure of the photoelectronic devices in the new field of research and development plays a very important role and control of photoelectronic devices, the improving the quality and the performance indicators of these devices have alreadly become a very important topic. In order to grasp the device characteristics and moving to futher research, the characteristics of photoelectronic devices should be measured detailly. The rquivalent circuit model is the product after modeling of electrical characteristics of solid-state electronic devices. The equivalent circuit models are very important in guiding the design of the readout circuits, which has become a key point after the measureing of the devices.In order to measure the photoelectronics devices, the appropriate test platforms become necessary. The test platforms in this paper contain electric test platform and photoelectric test platform. Accurate data on the device characteristics could be obtained by use them. By using Keithley4200-SCS, as well as an interactive multi-use KITE software system, a suitable test platform system has been built to test a novel kind of optical storage devices, its I-V, C-V and C-F characteristics, the effects of the laser irradiation intensity and irradiation time on the device characteristics on its I-V characteristics. Understanding and grasping the characteristics of the device on the basis of the test result. Then use the test platform to measure the digital and analog output characteristics of photoelectronic devices and its docking with the read out circuit.The equivalent circuit modeling of photoelectronic devices is the basic circuit components of the device equivalent circuit. In other words, that means to describe the device physics equations into a circuit with some basic components to the circuit module characterization. A equivalent circuit model of a heterojunction photoelectronics device is proposed in this paper. We use this model to describe the relation between the bias voltage and current (I-V) of this kind of photoelectronics devices. The circuit model could simplify the structure of the circuit. Then analysis and discuss this kind of equivalent circuit model after the comparison between the simulation result and the experimental result by characteristics testing of the devices.